vishay siliconix sup/sub40n06-25l document number: 70288 s-60925-rev. d, 29-may-06 www.vishay.com 1 n-channel 60-v (d-s), 175 c mosfet, logic level features ? trenchfet ? power mosfets ? maximum junction temperature: 175 c rated product summary v (br)dss (v) r ds(on) ( )i d (a) 60 0.022 at v gs = 10 v 40 0.025 at v gs = 4.5 v 40 sup40 n 06-25l sub40 n 06-25l drai n connected to tab to-220ab top v ie w gds to-263 s g top v ie w d to-220ab: sup40 n 06-25l sup40 n 06-25l-e3 (lead (p b )-free) to-263: sub40 n 06-25l sub40 n 06-25l-e3 (lead (p b )-free) ordering information: d g s n-channel mosfet notes: a. duty cycle 1 %. b. see soa curve for voltage derating. c. surface mounted on fr4 board, t 10 sec. * pb containing terminations are not rohs compliant, exemptions may apply. absolute maximum ratings t c = 25 c, unless otherwise noted parameter symbol limit unit drain-source voltage v ds 60 v gate-source voltage v gs 20 continuous drain current (t j = 175 c) t c = 25 c i d 40 a t c = 100 c 25 pulsed drain current i dm 100 avalanche current i ar 40 repetitive avalanche energy a l = 0.1 mh e ar 80 mj power dissipation t c = 25 c (to-220ab and to-263) p d 90 c w t a = 25 c (to-263) c 3.7 operating junction and storage temperature range t j , t stg - 55 to 175 c thermal resistance ratings parameter symbol limit unit junction-to-ambient pcb mount (to-263) c r thja 40 c/w free air (to-220ab) 80 junction-to-case r thjc 1.6 available rohs* compliant
www.vishay.com 2 document number: 70288 s-60925-rev. d, 29-may-06 vishay siliconix sup/sub40n06-25l notes: a. pulse test; pulse width 300 s, duty cycle 2 %. b. guaranteed by design, not s ubject to production testing. c. independent of operating temperature. stresses beyond those listed under ?absolute maximum ratings? ma y cause permanent damage to the device. these are stress rating s only, and functional operation of the device at these or any other condit ions beyond those indicated in the operational sections of the specifications is not implied. exposure to absolute maximum rating conditions for extended periods may affect device reliability. specifications t j = 25 c, unless otherwise noted parameter symbol test conditions min typ max unit static drain-source breakdown voltage v (br)dss v gs = 0 v, i d = 250 a 60 v gate threshold voltage v gs(th) v ds = v gs , i d = 250 a 1.0 2.0 3.0 gate-body leakage i gss v ds = 0 v, v gs = 20 v 100 na zero gate voltage drain current i dss v ds = 60 v, v gs = 0 v 1 a v ds = 60 v, v gs = 0 v, t j = 125 c 50 v ds = 60 v, v gs = 0 v, t j = 175 c 150 on-state drain current a i d(on) v ds = 5 v, v gs = 10 v 40 a drain-source on-state resistance a r ds(on) v gs = 10 v, i d = 20 a 0.022 v gs = 10 v, i d = 20 a, t j = 125 c 0.043 v gs = 10 v, i d = 20 a, t j = 175 c 0.053 v gs = 4.5 v, i d = 20 a 0.025 forward transconductance a g fs v ds = 15 v, i d = 20 a s dynamic b input capacitance c iss v gs = 0 v, v ds = 25 v, f = 1 mhz 1800 pf output capacitance c oss 350 reverse transfer capacitance c rss 100 total gate charge c q g v ds = 30 v, v gs = 10 v, i d = 40 a 40 60 nc gate-source charge c q gs 9 gate-drain charge c q gd 10 tu r n - o n d e l ay t i m e c t d(on) v dd = 30 v, r l = 0.8 i d ? 40 a, v gen = 10 v, r g = 2.5 10 20 ns rise time c t r 920 turn-off delay time c t d(off) 28 50 fall time c t f 715 source-drain diode ratings and characteristics t c = 25 c b continuous current i s 40 a pulsed current i sm 100 forward voltage a v sd i f = 40 a, v gs = 0 v 1.0 1.5 v reverse recovery time t rr i f = 40 a, di/dt = 100 a/s 48 100 ns peak reverse recovery charge i rm(rec) 6a reverse recovery charge q rr 0.15 c
document number: 70288 s-60925-rev. d, 29-may-06 www.vishay.com 3 vishay siliconix sup/sub40n06-25l typical characteristics 25 c unless noted output characteristics transconductance capacitance v ds ? drain-to-source voltage (v) ? drain current (a) i d 0 20 40 60 80 100 0246810 4 v v gs = 10, 9, 8, 7 v 5 v 3 v 6 v ? transconductance (s) g fs 0 10 20 30 40 50 60 70 0 102030405060 t c = - 55 c 25 c 125 c i d ? drain current (a) v ds ? drain-to-source voltage (v) c ? capacitance (pf) c rss 0 500 1000 1500 2000 2500 3000 0 15304560 c oss c iss transfer characteristics on-resistance vs. drain current gate charge v gs ? gate-to-source voltage (v) ? drain current (a) i d 0 15 30 45 60 012345 25 c - 55 c t c = 125 c ( ) e c n a t s i s e r - n o ? i d ? drain current (a) r ds(on) 0 0.01 0.02 0.03 0.04 0 102030405060 v gs = 10 v v gs = 4.5 v ) v ( e g a t l o v e c r u o s - o t - e t a g ? q g ? total gate charge (nc) v gs 0 2 4 6 8 10 0 1020304050 v ds = 30 v i d = 40 a
www.vishay.com 4 document number: 70288 s-60925-rev. d, 29-may-06 vishay siliconix sup/sub40n06-25l typical characteristics 25 c unless noted thermal ratings vishay siliconix maintains worldwide manufacturing capability. products may be manufactured at one of several qualified locatio ns. reliability data for silicon tech- nology and package reliability represent a com posite of all qualified locations. for related documents such as package/tape dra wings, part marking, and reliability data, see http://www.vishay.com/ppg?70288. on-resistance vs. junction temperature (normalized) ? on-resistance t j ? junction temperature ( ) c r ds(on) 0 0.5 1.0 1.5 2.0 2.5 - 50 - 25 0 25 50 75 100 125 150 175 v gs = 10 v i d = 20 a source-drain diode forward voltage v sd ? source-to-drain voltage (v) ? source current (a) i s 100 10 1 0.3 0.6 0.9 1.2 1.5 t j = 25 c t j = 150 c 0 drain current vs. case temperature t c ? case temperature (c) ? drain current (a) i d 0 10 20 30 40 50 0 25 50 75 100 125 150 175 safe operating area v ds ? drain-to-source voltage (v) ? drain current (a) i d 200 10 0.1 0.1 1 10 100 limited by r ds(on) 1 100 t c = 25 c single pulse 1 ms 10 ms 100 ms dc, 1 s 100 s normalized thermal transient impedance, junction-to-case square wave pulse duration (sec) 2 1 0.1 0.01 10 - 5 10 - 4 10 - 3 10 - 2 10 - 1 1 normalized effective transient thermal impedance 3 0.2 0.1 0.05 0.02 single pulse duty cycle = 0.5
document number: 91000 www.vishay.com revision: 18-jul-08 1 disclaimer legal disclaimer notice vishay all product specifications and data are subject to change without notice. vishay intertechnology, inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, ?vishay?), disclaim any and all liability fo r any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. vishay disclaims any and all li ability arising out of the use or application of any product describ ed herein or of any information provided herein to the maximum extent permit ted by law. the product specifications do not expand or otherwise modify vishay?s terms and conditions of purcha se, including but not limited to the warranty expressed therein, which apply to these products. no license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of vishay. the products shown herein are not designed for use in medi cal, life-saving, or life-sustaining applications unless otherwise expressly indicated. customers using or selling vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify vishay for any damages arising or resulting from such use or sale. please contact authorized vishay personnel to obtain written terms and conditions regarding products designed for such applications. product names and markings noted herein may be trademarks of their respective owners.
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